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| Datasheet File OCR Text: |
| N-Channel JFET High Frequency Amplifier CORPORATION J308 - J310 / SST308 - SST310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Continuous Forward Gate Current . . . . . . . . . . . . . . . . -10mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . 3.27mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SOT-23 G TO-92 * Industry Standard Part in Low Cost Plastic Package * High Power Gain * Low Noise * Dynamic Range Greater Than 100dB * Easily Matched to 75 Input * VHF/UHF Amplifiers * Oscillators * Mixers PIN CONFIGURATION APPLICATIONS ORDERING INFORMATION Part Package Temperature Range J308-310 Plastic TO-92 -55oC to +135oC SST308-310 Plastic SOT-23 -55oC to +135oC For Sorted Chips in Carriers see U308 series. D S G DS 5021 PRODUCT MARKING (SOT-23) SST308 Z08 SST309 SST310 Z09 Z10 J308 - J310 / SST308 - SST310 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL BVGSS IGSS VGS(off) IDSS VGS(f) gfs gos gfg g og PARAMETER MIN Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Saturation Drain Current (Note 1) Gate-Source Forward Voltage Common-Source Forward Transconductance Common-Source Output Conductance Common-Gate Forward Transconductance Common Gate Output Conductance 13,000 150 8,000 17,000 250 13,000 150 -1.0 12 -25 -1.0 -1.0 -6.5 60 1.0 10,000 17,000 250 12,000 150 -1.0 12 308 TYP MAX MIN -25 -1.0 -1.0 -4.0 30 1.0 8,000 17,000 250 VDS = 10V ID = 10mA (Note 2) -2.0 24 309 TYP MAX MIN -25 -1.0 -1.0 -6.5 60 1.0 310 TYP MAX V nA A V mA V IG = -1A, VDS = 0 VGS = -15V, VDS = 0 TA = 125 o UNITS TEST CONDITIONS VDS = 10V, ID = 1nA VDS = 10V, VGS = 0 VDS = 0, IG = 1mA S f = 1kHz ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL Cgd Cgs en PARAMETER Gate-Drain Capacitance Gate-Source Capacitance Equivalent Short-Circuit Input Noise Voltage Common-Source Forward Transconductance Common-Gate Input Conductance Common-Source Input Conductance Common-Source Output Conductance Common-Gate Power Gain at Noise Match Noise Figure Common-Gate Power Gain at Noise Match Noise Figure 308 1.8 4.3 10 2.5 5.0 309 1.8 4.3 10 2.5 5.0 310 1.8 4.3 2.5 5.0 nV UNITS TEST CONDITIONS VDS = 10V, VGS = -10 f = 1MHz (Note 2) f = 100Hz (Note 2) MIN TYP MAX MIN TYP MAX MIN TYP MAX pF VDS = 10V, 10 c4onVcXICAcXaBCCG`* QXoHzaIe Hzu IDc= 10mA 12 14 0.4 0.15 16 1.5 11 2.7 dB VDS = 10V, ID = 10mA (Note 2) Re(Vfs) Re(Vfg) Re(Vis) Re(Vos) Gpg NF Gpg NF 12 14 0.4 0.15 16 1.5 11 2.7 12 14 0.4 0.15 16 1.5 11 2.7 S f = 105MHz f = 450MHz NOTES: 1. Pulse test PW 300s, duty cycle 3%. 2. For design reference only, not 100% tested. |
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